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| Transistors MSG43001 SiGe HBT type For low-noise RF amplifier Features * Compatible between high breakdown voltage and high cutoff frequency * Low-noise, high-gain amplification * Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm x 1.0 mm (height 0.39 mm) Unit: mm 1 1.000.05 0.600.05 3 2 0.39+0.01 -0.03 0.150.05 0.050.03 0.350.01 0.250.05 0.500.05 0.250.05 1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation* Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 30 100 125 -55 to +125 Unit V V V mA mW C C 3 0.650.01 2 0.050.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 3N Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm x 12 mm x 0.8 mm. Electrical Characteristics Ta = 25C 3C Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Forward transfer gain Noise figure Collector output capacitance (Common base, input open circuited) Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 3 mA VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz 9.0 100 19 11.0 1.4 0.3 2.0 0.6 Min Typ Max 1 1 1 220 Unit A A A GHz dB dB pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: October 2004 SJC00295BED 1 MSG43001 PC Ta 120 IC VCE IB = 80 A 12 hFE IC VCE = 3 V 160 Collector power dissipation PC (mW) Collector current IC (mA) 70 A 60 A 8 50 A 40 A 30 A 4 20 A 10 A Forward current transfer ratio hFE 80 120 80 40 40 0 0 0 40 80 120 0 2 4 6 0 0.01 0.1 1 10 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) fT I C VCE = 3 V f = 2 GHz Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 0.8 f = 1 MHz 0.7 10 15 GP I C VCE = 3 V f = 2 GHz 25 Transition frequency fT (GHz) 20 15 Power gain GP (dB) 0 2 4 6 0.6 0.5 0.4 5 10 0 0.3 0.2 0.1 5 -5 0 1 10 100 -10 0.1 1 10 100 Collector current IC (mA) Collector-base voltage VCB (V) Collector current IC (mA) S21e2 IC VCE = 3 V f = 2 GHz NF IC VCE = 3 V f = 2 GHz S11 , S22 1.0 0.5 2.0 VCE = 3 V IC = 10 mA Forward transfer gain S21e (dB) 12 6 2 Noise figure NF (dB) 8 4 0 S11 2 1 S22 4 - 0.5 0 1 10 100 -2.0 -1.0 0 0.1 1 10 100 Collector current IC (mA) Collector current IC (mA) 2 SJC00295BED MSG43001 S21e2, S12e2 f 40 Forward transfer coefficient S21e2, Reverse transfer coefficient S12e2 (dB) 20 S21e2 0 -20 S12e2 -40 0 1 2 3 Frequency f (GHz) SJC00295BED 3 |
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